| PART |
Description |
Maker |
| SST12LP10 SST12LP10-QVC SST12LP14A-QVCE-K SST12LP1 |
2.4 GHz High-Linearity Power Amplifier
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| SST12LP14A-QVCE-K SST12LP14A SST12LP14A-QVCE |
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| CGD1042H CGD1042H-2015 |
1 GHz, 23 dB gain high output power doubler
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| LD7261 |
20 GHz / 250 W CW / PPM FOCUSING / HIGH POWER GAIN
20 GHz, 250 W CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
| CGD987HCI |
1 GHz, 27 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler CGD982HCI<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
